TSM3424_11 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel MOSFET

TSM3424
30V N-Channel MOSFET
SOT-26
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
30 @ V_GS = 10V
30
42 @ V_GS = 4.5V
I_D (A)
6.7
5.7
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
Package
Packing
TSM3424CX6 RF
SOT-26
3Kpcs / 7” Reel
TSM3424CX6 RFG SOT-26
3Kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain Current
I_D
6.7
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a,b
I_DM
30
I_S
1.7
Ta = 25^oC
2.0
Maximum Power Dissipation
Ta = 75^oC
P_D
1.3
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T_J
T_J, T_STG
+150
-55 to +150
Thermal Performance
Parameter
Symbol
Limit
Junction to Case Thermal Resistance
RÓ¨_JC
30
Junction to Ambient Thermal Resistance (PCB mounted)
RÓ¨_JA
80
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: C11