TSM3401_15 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – P-Channel Power MOSFET

TSM3401
Taiwan Semiconductor
P-Channel Power MOSFET
-30V, -3A, 60mΩ
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-
resistance
● Pb-free plating
● RoHS compliant
● Halogen-free package
Application
● Load Switch
● PA Switch
SOT23
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
V_DS
-30
V
V_GS = -10V
60
R_DS(on) (max)
mΩ
V_GS = -4.5V
90
Q_g
9.52
nC
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ^{(Note 1)}
T_A = 25°C
I_D
-3
Pulsed Drain Current ^{(Note 2)}
I_DM
-10
Continuous Source Current (Diode Conduction)
I_S
-1.9
Total Power Dissipation
T_A = 25°C
P_DTOT
1.6
Operating Junction and Storage Temperature Range
T_J, T_STG
- 55 to +150
UNIT
V
V
A
A
A
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
R_Ó¨JC
75
°C/W
Junction to Ambient Thermal Resistance
R_Ó¨JA
250
°C/W
Notes: RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RÓ¨JA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000072
1
Version: C15