TSM3400 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel MOSFET

TSM3400
30V N-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
28 @ V_GS = 10V
30
33 @ V_GS = 4.5V
52 @ V_GS = 2.5V
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
TSM3400CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel
N-Channel MOSFET
I_D (A)
5.8
5.0
4.0
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a,b
Maximum Power Dissipation @ Ta = 25^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J
T_J, T_STG
Thermal Performance
Parameter
Symbol
Junction to Foot Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
RÓ¨_JF
RÓ¨_JA
Limit
30
±12
5.8
30
2.5
1.4
+150
-55 to +150
Limit
70
90
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/1
Version: A09