TSM320N03CX Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel Power MOSFET

TSM320N03CX
30V N-Channel Power MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Parameter
Value
V_DS
30
V_GS = 4.5V
32
R_DS(on) (max) _{VGS = 2.5V}
40
Q_g
8.4
Unit
V
mΩ
nC
Features
● Improved dv/dt capability
● Fast switching
Ordering Information
Part No.
Package
Packing
TSM320N03CX RFG SOT-23
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Absolute Maximum Ratings (T_C = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Tc = 25°C
I_D
Tc = 100°C
I_DM
Power Dissipation @ T_C = 25°C
P_D
Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Ambient
R_Ó¨JA
Block Diagram
N-Channel MOSFET
Limit
30
±12
5.3
3.4
21.2
1.56
150
-55 to +150
Limit
80
Unit
V
V
A
A
A
W
°C
°C
Unit
°C/W
1/5
Version: A15