TSM301K12CQ_13 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel MOSFET with Schottky Diode

TSM301K12
20V P-Channel MOSFET with Schottky Diode
TDFN 2x2
Pin Definition:
1. Anode 6. Cathode
2. NC
5. Gate
3. Drain 4. Source
7. Cathode 8. Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
I_D (A)
94 @ V_GS = -4.5V
-2.8
-20
131 @ V_GS = -2.5V
-2.3
185 @ V_GS = -1.8V
-0.54
SCHOTTKY PRODUCT SUMMARY
V_R (V)
V_F (V)
I_F (A)
20
0.5
2
Features
● Configuration with MOSFET and Low Vf SKY
● Package low profile 0.75mm (Typ)
● Independent Pin Out for Design Flexibility
Application
● Load Switch for Portable Applications
● DC-DC Buck Circuit
● Li-ion Battery Applications
● Cellular Charger Switch
Ordering Information
Block Diagram
P-Channel MOSFET with Schottky Diode
Part No.
Package
TSM301K12CQ RFG TDFN 2x2
Note: “G” denotes for Halogen Free
Packing
3Kpcs / 7” Reel
MOSFET Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1,2)
Pulsed Drain Current
Maximum Power Dissipation
T_C=25 ^oC
T_A=25 ^oC (Note 2)
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
PD
T_J
T_J, T_STG
Schottky Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Reverse Voltage
V_R
Average Forward Current (Note 1,2)
I_F
Pulsed Forward Current
I_FM
Maximum Power Dissipation (Note 1)
T_C=25 ^oC
T_A=25 ^oC (Note 2)
PD
Limit
-20
±12
-4.5
-8
6.5
1.56
+150
- 55 to +150
Limit
20
2
5
6.8
1.47
Unit
V
V
A
A
W
W
o_C
o_C
Unit
V
A
A
W
W
1/7
Version: D13