TSM2NB60 Datasheet, PDF (1/10 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel Power MOSFET

TSM2NB60
600V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
600
4.4 @ V_GS =10V
I_D (A)
1
TO-251
(IPAK)
TO-252
(DPAK)
General Description
The TSM2NB60 N-Channel Power MOSFET is
produced by new advance planar process. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
Features
● Low R_DS(ON) 3.9Ω (Typ.)
● Low gate charge typical @ 9.5nC (Typ.)
● Low Crss typical @ 5pF (Typ.)
● 100% Avalanche Tested
Block Diagram
Ordering Information
Part No.
Package
TSM2NB60CH C5G TO-251
TSM2NB60CP ROG TO-252
TSM2NB60CZ C0
TO-220
TSM2NB60CI C0
ITO-220
Note: “G” denotes for Halogen Free
Packing
75pcs / Tube
2.5Kpcs / 13” Reel
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Limit
Symbol
IPAK/DPAK ITO-220
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Tc = 25ºC
2
Continuous Drain Current
Tc = 100ºC
I_D
1.35
Pulsed Drain Current *
I_DM
8
Single Pulse Avalanche Energy (Note 2)
E_AS
39
Avalanche Current (Repetitive) (Note 1)
I_AR
2
Repetitive Avalanche Energy (Note 1)
E_AR
4.4
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
Total Power Dissipation @ T_C = 25^oC
P_TOT
44
25
Operating Junction Temperature
T_J
150
Storage Temperature Range
Note: Limited by maximum junction temperature
T_STG
-55 to +150
TO-220
70
Unit
V
V
A
A
A
mJ
A
mJ
V/ns
W
ºC
o_C
1/10
Version: B11