TSM2N7002_07 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 500V N-Channel Power MOSFET

TSM2N7002
60V N-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
7.5 @ V_GS = 10V
60
7.5 @ V_GS = 4.5V
I_D (mA)
300
200
Features
● Fast Switching Speed
● Low Input and Output Leakage
Application
● Direct Logic-Level Interface: TTL/CMOS
● Solid-State Relays
Ordering Information
Part No.
Package
Packing
TSM2N7002CX RF SOT-23 3Kpcs / 7” Reel
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
Ta = 25^oC
Ta = 75^oC
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T_J
T_J, T_STG
Thermal Performance
Parameter
Symbol
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
T_L
RÓ¨_JA
Limit
60
±20
300
800
300
350
220
+150
-55 to +150
Limit
5
357
Unit
V
V
mA
mA
mA
mW
o_C
o_C
Unit
S
o_C/W
1/6
Version: A07