TSM2N7002K_14 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 60V N-Channel MOSFET

SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
TSM2N7002K
60V N-Channel MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (max)
2 @ V_GS = 10V
60
4 @ V_GS = 4.5V
I_D (mA)
300
200
Features
● Low On-Resistance
● ESD Protected 2KV
● High Speed Switching
● Low Voltage Drive
Ordering Information
Block Diagram
Part No.
Package
TSM2N7002KCX RFG SOT-23
Note: “G” denotes for Halogen Free
Packing
3kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Ratings (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous @ T_A=25ºC
Pulsed
Drain Reverse Current
Continuous @ T_A=25ºC
Pulsed
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_DR
I_DMR
P_D
T_J
T_J, T_STG
60
±20
300
800
300
800
300
+150
-55 to +150
Thermal Performance
Parameter
Symbol
Limit
Lead Temperature (1/8” from case)
T_L
5
Junction to Ambient Thermal Resistance (PCB mounted)
R_Ó¨JA
350
Notes:
a. Pulse width ≤300µs, Duty cycle ≤2%
b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch.
c. The power dissipation of the package may result in a continuous drain current.
Unit
V
V
mA
mA
mW
o_C
o_C
Unit
S
o_C/W
1/6
Version: E14