TSM2N7002KD Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 60V N-Channel MOSFET

TSM2N7002KD
60V N-Channel MOSFET
SOT-363
Pin Definition:
1. Source 2 6. Drain 2
2. Gate 2
5. Gate 1
3. Drain 1
4. Source 1
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
2 @ V_GS = 10V
60
4 @ V_GS = 4.5V
I_D (mA)
300
200
Features
● Low On-Resistance
● ESD Protection
● High Speed Switching
● Low Voltage Drive
Ordering Information
Part No.
Package
Packing
TSM2N7002KDCU6 RF SOT-363 3Kpcs / 7” Reel
Block Diagram
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V_DS
60
V
Gate-Source Voltage
V_GS
±20
V
Drain Current
Continuous @ T_A=25ºC
I_D
Pulsed
I_DM
300
mA
800
Drain Reverse Current
Continuous @ T_A=25ºC
I_DR
Pulsed
I_DMR
300
mA
800
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
P_D
300
mW
T_J
+150
o_C
T_J, T_STG
-55 to +150
o_C
Thermal Performance
Parameter
Symbol
Limit
Lead Temperature (1/8” from case)
T_L
5
Junction to Ambient Thermal Resistance (PCB mounted)
RÓ¨_JA
625
Notes:
a. Pulse width ≤300us, Duty cycle ≤2%
b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch.
c. The power dissipation of the package may result in a continuous drain current.
Unit
S
o_C/W
1/6
Version: B09