TSM2N7002E_07 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – 60V N-Channel MOSFET

TSM2N7002E
60V N-Channel MOSFET
SOT-23
SOT-323
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
3 @ V_GS = 10V
60
4 @ V_GS = 4.5V
Features
● Low On-Resistance: 3Ω
● Low Input and Output Leakage
Application
● Direct Logic-Level Interface: TTL/CMOS
● Solid-State Relays
Ordering Information
Block Diagram
Part No.
TSM2N7002ECX RF
TSM2N7002ECU RF
Package
SOT-23
SOT-323
Packing
3Kpcs / 7” Reel
3Kpcs / 7” Reel
N-Channel MOSFET
I_D (mA)
300
200
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
Ta = 25^oC
Ta = 75^oC
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T_J
T_J, T_STG
Thermal Performance
Parameter
Symbol
Lead Temperature (1/8” from case)
T_L
Junction to Ambient Thermal Resistance (PCB mounted)
RÓ¨_JA
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
c. The power dissipation of the package may result in a continuous drain current.
Limit
60
±20
300
1
300
350
220
+150
-55 to +150
Limit
5
357
Unit
V
V
mA
A
mA
mW
o_C
o_C
Unit
S
o_C/W
1/7
Version: A07