TSM2N7002 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 60V N-Channel Enhancement Mode MOSFET

TSM2N7002
60V N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Source
3. Drain
V_DS = 60V
R_{DS (on)}, Vgs @ 10V, Ids @ 500mA = 7.5Ω
R_{DS (on)}, Vgs @ 5V, Ids @ 50mA = 13.5Ω
Features
— Advanced trench process technology
— High density cell design for low on-resistance
— High input impedance
— High speed switching
Block Diagram
— No minority carrier storage time
— CMOS logic compatible input
— No secondary breakdown
— Compact and low profile SOT-23 package
Ordering Information
Part No.
TSM2N7002CX
Packing
Tape & Reel
Package
SOT-23
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 ^oC
Ta > 25 ^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J
T_J, T_STG
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
T_L
Rθja
Limit
60
± 20
115
800
225
1.8
+150
- 55 to +150
Limit
5
417
Unit
V
V
mA
mA
mW
MW/ ^oC
o_C
o_C
Unit
S
o_C/W
TSM2N7002
1-3
2003/12 rev. B