TSM2N7000 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 60V N-Channel Enhancement Mode MOSFET

TSM2N7000
60V N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Source
3. Drain
V_DS = 60V
I_D = 200mA
R_{DS (on)}, Vgs @ 10V, Ids @ 500mA = 5.0Ω
General Description
The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most
applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited
for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other
switching applications.
Features
Ordering Information
— High density cell design for low on-resistance
— Voltage control small signal switch
— Rugged and reliable
— High saturation current capability
— Provide in TO-92 package
Part No.
TSM2N7000CT A3
TSM2N7000CT B0
Packing
Ammo pack
Bulk pack
Block Diagram
Package
TO-92
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage --- Continuous
--- Pulsed
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 ^oC
Ta > 25 ^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
V_DS
V_DGR
V_GS
V_GSM
I_D
I_DM
P_D
T_J
T_J, T_STG
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance
Symbol
T_L
Rθja
Limit
60
60
± 20
± 40
200
500
350
2.8
+150
- 55 to +150
Limit
10
357
Unit
V
V
V
mA
mA
mW
mW/ ^oC
o_C
o_C
Unit
S
o_C/W
TSM2N7000
1-3
2003/12 rev. A