TSM2N70 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – 700V N-Channel Power MOSFET

TO-251
(IPAK)
Preliminary
TSM2N70
700V N-Channel Power MOSFET
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
700
7 @ V_GS =10V
I_D (A)
0.8
General Description
The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low R_DS(ON) 7Ω (Max.)
● Low gate charge typical @ 11.4nC (Typ.)
● Low Crss typical @ 6.5pF (Typ.)
● Fast Switching
Ordering Information
Part No.
TSM2N70CH C5
TSM2N70CP RO
Package
TO-252
TO-251
Packing
70pcs / Tube
2.5Kpcs / 13” Reel
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current *
I_DM
Avalanche Current (Single) (Note 2)
I_AS
Single Pulse Avalanche Energy (Note 2)
E_AS
Maximum Power Dissipation @TC = 25^oC
P_D
Peak Diode Recovery Voltage Slope (Note 2)
dv/dt
Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
* Limited by maximum junction temperature
N-Channel MOSFET
Limit
700
±30
1.6
6.4
1.6
110
45
4.5
150
-55 to +150
Unit
V
V
A
A
A
mJ
W
V/ns
ºC
o_C
1/7
Version: Preliminary