TSM2N60_1 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Power Enhancement Mode MOSFET

TSM2N60
N-Channel Power Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Drain
3. Source
V_DS = 600V
I_D = 2A
R_{DS (on)}, Vgs @ 10V, Ids @ 1.0A =4.4Ω
General Description
The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche
and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are
critical and offer additional and safety margin against unexpected voltage transients.
Features
— Robust high voltage termination
— Avalanche energy specified
— Diode is characterized for use in bridge circuits
Block Diagram
— Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
— I_DSS and V_DS(on) specified at elevated temperature
Ordering Information
Part No.
TSM2N60CP
TSM2N60CH
Packing
Tape & Reel
Tube
Package
TO-252
TO-251
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 ^oC
Ta > 25 ^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Single Pulse Drain to Source Avalanche Energy
(V_DD = 100V, V_GS=10V, I_AS=2A, L=10mH, R_G=25Ω)
Thermal Performance
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J
T_J, T_STG
E_AS
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Symbol
T_L
Rθja
TSM2N60
1-4
Limit
600V
± 30
2
9
50
0.4
+150
- 55 to +150
20
Unit
V
V
A
A
W
W/^oC
o_C
o_C
mJ
Limit
10
62.5
Unit
S
o_C/W
2003/12 rev. F