TSM2N60_07 Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel Power MOSFET

TSM2N60
600V N-Channel Power MOSFET
TO-220
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
600
4.4 @ V_GS =10V
I_D (A)
1
General Description
The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
Block Diagram
Ordering Information
Part No.
TSM2N60CP RO
TSM2N60CH C5
TSM2N60CZ C0
Package
TO-252
TO-251
TO-220
Packing
2.5Kpcs/ 13” Reel
80pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Single Pulse Drain to Source Avalanche Energy
(V_DD = 100V, V_GS=10V, I_AS=2A, L=10mH, R_G=25Ω)
Maximum Power Dissipation @Ta = 25^oC
TO-251 / TO-252
TO-220
EAS
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
T_J, T_STG
Limit
600
±30
2
9
1
20
2.5
54
+150
-55 to +150
Unit
V
V
A
A
A
mJ
W
o_C
o_C
1/8
Version: A07