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TSM2N60S_15 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Power MOSFET | |||
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TSM2N60S
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 0.6A, 5Ω
FEATURES
â Robust high voltage termination
â Avalanche energy specified
â Diode is characterized for use in bridge circuits
â Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
600
V
RDS(on) (max)
5
Ω
Qg
13
nC
APPLICATION
â Power Supply
â Lighting
â Charger
SOT-223
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
TJ
TJ, TSTG
600
±30
0.6
0.36
1.5
2.5
150
- 55 to +150
UNIT
V
V
A
A
W
°C
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RÓ¨JC
15
°C/W
Junction to Ambient Thermal Resistance
RÓ¨JA
55.8
°C/W
Notes: RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RÓ¨JA is guaranteed by design while RÓ¨CA is determined by the userâs board
design. RÓ¨JA shown below for single device operation on FR-4 PCB in still air
Document Number: DS_P0000066
1
Version: B15
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