TSM2N60S Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel Power MOSFET

TSM2N60S
600V N-Channel Power MOSFET
SOT-223
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
600
5 @ V_GS =10V
I_D (A)
0.6
General Description
The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
Block Diagram
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
Ordering Information
Part No.
TSM2N60SCW RP
Package
Packing
SOT-223 2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Drain Source Voltage Slope (V_DS = 480V, I_D=0.8A, T_J = 125^oC)
Total Maximum Power Dissipation @Ta = 25^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
dv/dt
P_DTOT
T_J
T_J, T_STG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RÓ¨_JC
RÓ¨_JA
Limit
600
±30
0.6
1.5
1
50
2.5
+150
-55 to +150
Limit
15
55.8
Unit
V
V
A
A
A
V/ns
W
ºC
ºC
Unit
ºC/W
ºC/W
1/1
Version: A09