TSM2N60E Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Power MOSFET

TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
TSM2N60E
600V, 2A, 4Ω
N-Channel Power MOSFET
Key Parameter Performance
Parameter
Value
V_DS
600
R_DS(on)(max)
4
Qg (typ)
9.5
Unit
V
Ω
nC
Features
● 100% Avalanche Tested
● G-S ESD Protection Diode Embedded
Block Diagram
Ordering Information
Part No.
Package
Packing
TSM2N60ECH C5G
TO-251
75pcs / Tube
TSM2N60ECP ROG TO-252 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
N-Channel MOSFET with ESD Protection
Absolute Maximum Ratings (T_C = 25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^{(Note 1)}
Tc = 25℃
Tc = 100℃
Pulsed Drain Current ^{(Note 2)}
Repetitive Avalanche Current ^{(Note 1)}
Repetitive Avalanche Energy ^{(Note 1)}
Single Pulse Avalanche Energy ^{(Note 3)}
Total Power Dissipation
T_C = 25℃
Derate above T_C = 25℃
Peak Diode Recovery dV/dt ^{(Note 4)}
Operating Junction Temperature
Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
P_D
dV/dt
T_J
T_STG
600
±30
2
1.43
8
2
5.2
66
52.1
0.416
4.5
-55 to +150
-55 to +150
V
V
A
A
A
A
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R_Ó¨JC
R_Ó¨JA
Limit
2.4
110
Unit
℃/W
℃/W
1/7
Version: A14