TSM2611ED Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V Dual N-Channel MOSFET w/ESD Protected

TSM2611ED
20V Dual N-Channel MOSFET w/ESD Protected
SOT-26
Pin Definition:
1. Source 1 6. Gate 1
2. Drain 1 5. Drain 2
3. Source 2 4. Gate 2
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
20 @ V_GS = 4.5V
20
28 @ V_GS = 2.5V
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On resistance
● ESD Protected HBM 2KV
Block Diagram
Application
● Portable Applications
● Battery Management
Ordering Information
Part No.
Package Packing
`
TSM2611EDCX6 RFG SOT-26 3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Dual N-Channel MOSFET
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a,b
Maximum Power Dissipation
T_A=25^oC
T_A=100^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J
T_J, T_STG
20
±10
6
22
1
0.83
0.3
+150
-55 to +150
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in² pad, t ≤ 10 sec.
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
80
150
I_D (A)
6
5
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: A11