TSM260P02CX6 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel Power MOSFET

TSM260P02CX6
20V P-Channel Power MOSFET
SOT-26
Pin Definition:
1. Drain 6. Drain
2. Drain 5. Drain
3. Gate
4. Source
Key Parameter Performance
Parameter
Value
V_DS
-20
V_GS = -4.5V
26
R_DS(on) (max) VGS = -2.5V
32
V_GS = -1.8V
40
Q_g
27
Features
● Fast switching
● Suitable for -1.8V drive applications
Ordering Informationd
Part No.
Package
Packing
TSM260P02CX6 RFG SOT-26
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
Unit
V
mΩ
nC
Absolute Maximum Ratings (T_C = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Power Dissipation @ T_C = 25^oC
Tc = 25°C
I_D
Tc = 100°C
I_DM
P_D
Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
P-Channel MOSFET
Limit
-20
±10
-6.5
-4.1
-26
1.56
150
-55 to +150
Unit
V
V
A
A
A
W
°C
°C
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
Symbol
R_Ó¨JA
Limit
80
Unit
°C/W
1/5
Version: A15