TSM25N03 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 25V N-Channel MOSFET

TSM25N03
25V N-Channel MOSFET
TO-252
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
14 @ V_GS = 10V
25
19 @ V_GS = 4.5V
I_D (A)
25
25
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● Dc-DC Converters and Motors Drivers
Ordering Information
Block Diagram
Part No.
Package
Packing
TSM25N03CP RO TO-252 2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current, V_GS @4.5V.
I_D
Pulsed Drain Current, V_GS @4.5V
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Single Pulse Drain to Source Avalanche Energy
(V_DD = 100V, V_GS=10V, I_AS=2A, L=10mH, R_G=25Ω)
Maximum Power Dissipation
Ta = 25^oC
Ta = 70^oC
EAS
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
T_J, T_STG
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Maximum DC current limited by the package
b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec.
Symbol
T_L
RÓ¨_JC
RÓ¨_JA
Limit
25
±20
25
100
20
45
60
23
+150
-55 to +150
Limit
10
1.8
40
Unit
V
V
A
A
A
mJ
W
o_C
o_C
Unit
S
o_C/W
o_C/W
1/6
Version: A07