TSM250N02DCQ Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 20V Dual N-Channel MOSFET

TSM250N02DCQ
20V Dual N-Channel MOSFET
TDFN 2x2
Pin Definition:
1. Source 1
2. Gate 1
3. Drain 2
6. Drain 1
5. Gate 2
4. Source 2
Key Parameter Performance
Parameter
Value
V_DS
20
V_GS = 4.5V
25
R_DS(on) (max)
V_GS = 2.5V
35
V_GS = 1.8V
55
Q_g
7.7
Unit
V
mΩ
nC
Features
Suitable for 1.8V drive applications
Low profile package
Block Diagram
Ordering Information
Part No.
Package
Packing
TSM250N02DCQ RFG TDFN 2x2 3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds
Dual N-Channel MOSFET
Absolute Maximum Ratings (T_C=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Maximum Power Dissipation @ T_C=25^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
PD
T_J
T_J, T_STG
Thermal Performance
Parameter
Thermal Resistance Junction to Ambient
Symbol
R_Ó¨JA
Limit
20
±10
5.8
23.2
1
+150
- 55 to +150
Limit
80
Unit
V
V
A
A
W
°C
°C
Unit
°C/W
1/5
Version: A14