TSM240N03CX6 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel Power MOSFET

TSM240N03CX6
30V N-Channel Power MOSFET
SOT-26
Pin Definition:
1. Drain 6. Drain
2. Drain 5. Drain
3. Gate
4. Source
Key Parameter Performance
Parameter
Value
V_DS
30
V_GS = 10V
24
R_DS(on) (max) _{VGS = 4.5V}
34
Q_g
4.1
Unit
V
mΩ
nC
Features
● Halogen-free
● Improved dV/dt capability
● Fast Switching
Ordering Information
Part No.
Package
Packing
TSM240N03CX6 RFG SOT-26
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (T_C = 25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Single Pulse Avalanche Energy ^{(Note 2)}
Power Dissipation @ T_C = 25℃
Operating Junction Temperature
Storage Temperature Range
T_C = 25℃
T_C = 100℃
V_GS
I_D
I_DM
E_AS
P_D
T_J
T_STG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Ambient
R_Ó¨JA
N-Channel MOSFET
Limit
30
±20
6.5
4.1
26
32
1.56
150
-55 to +150
Limit
80
Unit
V
V
A
A
A
mJ
W
℃
℃
Unit
℃/W
1/5
Version: A14