TSM240N03CX Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel Power MOSFET

TSM240N03CX
30V N-Channel Power MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Parameter
Value
V_DS
30
V_GS = 10V
24
R_DS(on) (max)
V_GS = 4.5V
34
Q_g
4.1
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM240N03CX RFG SOT-23
3kpcs / 7” Reel
● Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (T_C = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25°C
I_D
T_C = 100°C
Pulsed Drain Current ^{(Note 1)}
I_DM
Single Pulse Avalanche Energy ^{(Note 2)}
E_AS
Power Dissipation @ T_C = 25°C
Operating Junction Temperature
Storage Temperature Range
P_D
T_J
T_STG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Ambient
R_Ó¨JA
N-Channel MOSFET
Limit
30
±20
6.5
4.1
26
32
1.56
150
-55 to +150
Limit
80
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
°C/W
1/5
Version: A14