TSM2328_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 100V N-Channel MOSFET

TSM2328
100V N-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Parameter
Value
V_DS
100
R_DS(on) (max)
250
Q_g
11.1
Features
● Low R_DS(ON) 250mΩ (Max.)
● Low gate charge typical @ 11.1nC (Typ.)
● High performance trench technology
Ordering Information
Part No.
Package
Packing
TSM2328CX RFG SOT-23
3Kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and <1000ppm antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ T_A = 25^oC
Operating Junction Temperature
Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J
T_STG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Foot
Thermal Resistance - Junction to Ambient
RÓ¨_JF
RÓ¨_JA
Limit
100
±20
1.5
6
0.6
1.38
150
-55 to +150
Limit
55
100
Unit
V
mΩ
nC
Unit
V
V
A
A
A
W
ºC
o_C
Unit
o_C/W
o_C/W
1/5
Version: B14