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| TSM2328 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 100V N-Channel MOSFET | |||
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Preliminary
TSM2328
100V N-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mâ¦)
100
250 @ VGS =10V
ID (A)
1.5
General Description
The TSM2328 utilized advanced processing techniques to achieve the lowest possible On-Resistance, extremely
efficient and cost-effectiveness device.
The TSM2328 is universally used for all commercial-industrial applications
Features
â Low RDS(ON) 250m⦠(Max.)
â Low gate charge typical @ 11.1nC (Typ.)
â High performance trench technology
Block Diagram
Ordering Information
Part No.
TSM2328CX RF
Package
SOT-23
Packing
3Kpcs / 7â Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current *
IDM
Continuous Source Current (Diode Conduction)
IS
Total Power Dissipation @ TA = 25oC
PD
Operating Junction Temperature
TJ
Storage Temperature Range
* Limited by maximum junction temperature
TSTG
Thermal Performance
Parameter
Thermal Resistance - Junction to Foot
Thermal Resistance - Junction to Ambient
Note 1: Surface mounted on 1â x 1â FR4
Note 2: Pules width limited by maximum junction temperature
Symbol
RÓ¨JF
RÓ¨JA
Limit
100
±20
1.5
6
0.6
1.38
150
-55 to +150
Limit
55
100
Unit
V
V
A
A
A
W
ºC
oC
Unit
oC/W
oC/W
1/4
Version: Preliminary
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