TSM2323 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel MOSFET

TSM2323
20V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
39 @ V_GS = -4.5V
-20
52 @ V_GS = -2.5V
68 @ V_GS = -1.8V
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
P-Channel MOSFET
Part No.
Package
Packing
TSM2323CX RF SOT-23 3Kpcs / 7” Reel
I_D (A)
-4.7
-4.1
-2.0
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current, V_GS @4.5V.
I_D
Pulsed Drain Current, V_GS @4.5V
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
Ta = 25^oC
Ta = 70^oC
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T_J
T_J, T_STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
-20
±8
-4.7
-20
-1.0
1.25
0.8
+150
- 55 to +150
Limit
75
250
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: A07