TSM2312 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 20V N-Channel Enhancement Mode MOSFET

TSM2312
20V N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Source
3. Drain
V_DS = 20V
R_{DS (on)}, Vgs @ 4.5V, Ids @ 5.0A = 33mΩ
R_{DS (on)}, Vgs @ 2.5V, Ids @ 4.0A = 40mΩ
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
TSM2312CX
Packing
Tape & Reel
Package
SOT-23
Absolute Maximum Rating (Ta = 25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 ^oC
Ta = 75 ^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J
T_J, T_STG
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
T_L
Rθja
Limit
20V
±8
5
15
1.25
0.8
+150
- 55 to +150
Limit
5
100
Unit
V
V
A
A
W
o_C
o_C
Unit
S
o_C/W
TSM2312
1-1
2003/12 rev. A