TSM2311_07 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel MOSFET

TSM2311
20V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
55 @ V_GS = -4.5V
-20
85 @ V_GS = -2.5V
I_D (A)
-4.0
-2.5
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No.
Package
Packing
TSM2311CX RF SOT-23 3Kpcs / 7” Reel
Block Diagram
P-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current, V_GS @4.5V.
I_D
Pulsed Drain Current, V_GS @4.5V
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
Ta = 25^oC
Ta = 75^oC
P_D
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T_J
T_J, T_STG
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
c. Surface Mounted on FR4 Board,
Symbol
T_L
RÓ¨_JA
Limit
-20
±8
-4
-20
-0.72
0.9
0.57
+150
- 55 to +150
Limit
5
250
Unit
V
V
A
A
A
W
o_C
o_C
Unit
S
o_C/W
1/6
Version: A07