TSM230N06PQ56 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 60V N-Channel Power MOSFET

TSM230N06PQ56
60V N-Channel Power MOSFET
PDFN56
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
V_DS
60
V_GS = 10V
23
R_DS(on) (max) _{VGS = 4.5V}
28
Q_g
28
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM230N06PQ56 RLG PDFN56 2.5kpcs / 13” Reel
● Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Tc = 25℃
I_D
Tc = 100℃
Pulsed Drain Current ^{(Note 1)}
I_DM
Single Pulse Avalanche Energy ^{(Note 2)}
E_AS
Power Dissipation @ T_C = 25℃
P_D
Operating Junction Temperature
T_J
Storage Temperature Range
T_STG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
R_Ó¨JC
R_Ó¨JA
Limit
60
±20
44
28
176
42
83
-55 to +150
-55 to +150
Limit
1.5
62
Unit
V
V
A
A
A
mJ
W
℃
℃
Unit
℃/W
1/6
Version: A14