TSM230N06 Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – 60V N-Channel Power MOSFET

TO-220
TO-252
(DPAK)
TSM230N06
60V N-Channel Power MOSFET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
V_DS
60
V_GS = 10V
23
R_DS(on) (max) _{VGS = 4.5V}
28
Q_g
28
Unit
V
mΩ
nC
Features
● 100% avalanche tested
● Fast Switching
Ordering Information
Part No.
Package
Packing
TSM230N06CZ C0G
TO-220
50pcs / Tube
TSM230N06CI C0G
ITO-220
50pcs / Tube
TSM230N06CP ROG TO-252 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^{(Note 1)}
Pulsed Drain Current ^{(Note 2)}
Single Pulse Avalanche Energy ^{(Note 3)}
Power Dissipation @ T_C = 25°C
Operating Junction Temperature
Storage Temperature Range
Tc = 25°C
Tc = 100°C
V_DS
V_GS
I_D
I_DM
E_AS
P_D
T_J
T_STG
TO-220
104
Limit
ITO-220
60
±20
50*
32*
200
42
42
150
-55 to +150
DPAK
53
Unit
V
V
A
A
A
mJ
W
°C
°C
1/8
Version: C14