TSM2309 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 60V P-Channel Power MOSFET

TSM2309
60V P-Channel Power MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Parameter
Value
V_DS
-60
V_GS = -10V
190
R_DS(on) (max)
V_GS = -4.5V
240
Q_g
8.2
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM2309CX RFG
SOT-23
3kcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (T_C = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Power Dissipation @ T_C = 25°C
Operating Junction Temperature
Storage Temperature Range
Tc=25°C
Tc=100°C
V_DS
V_GS
I_D
I_DM
P_D
T_J
T_STG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Ambient
R_Ó¨JA
P-Channel MOSFET
Limit
-60
±20
-3.1
-2
-12.4
1.56
50
-50 to +150
Limit
80
Unit
V
V
A
A
A
W
°C
°C
Unit
°C/W
1/5
Version: A15