TSM2308 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 60V N-Channel MOSFET

TSM2308
60V N-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
156 @ V_GS = 10V
60
192 @ V_GS = 4.5V
I_D (A)
3
2.1
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● DC-DC Power System
● Load Switch
Ordering Information
Part No.
Package
Packing
TSM2308CX RFG SOT-23
3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a,b
Maximum Power Dissipation
T_A=25^oC
T_A=75^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J
T_J, T_STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in² pad of 2oz Cu, t ≤ 5 sec.
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
60
±20
3
6
3
1.25
0.8
+150
-55 to +150
Limit
80
150
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: A11