TSM2307CX_14 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 30V P-Channel MOSFET

TSM2307CX
30V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Parameter
Value
V_DS
-30
V_GS = -10V
95
R_DS(on) (max) _{VGS = -4.5V}
140
Q_g
10
Unit
V
mΩ
nC
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No.
TSM2307CX RF
TSM2307CX RFG
Package
SOT-23
SOT-23
Packing
3kpcs / 7” Reel
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Absolute Maximum Ratings (T_C = 25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^{(Note 1)}
Pulsed Drain Current ^{(Note 2)}
Continuous Source Current (Diode Conduction)
Power Dissipation
T_a = 25℃
T_a = 75℃
Operating Junction Temperature
Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J
T_STG
Block Diagram
P-Channel MOSFET
Limit
-30
±20
-3
-20
-1.7
1.25
0.8
+150
-50 to +150
Unit
V
V
A
A
A
W
℃
℃
1/6
Version: C14