TSM2307 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 30V P-Channel MOSFET

TSM2307
30V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
80 @ V_GS = -10V
-30
140 @ V_GS = -4.5V
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Block Diagram
Part No.
TSM2307CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel
P-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)^a,b
I_S
Maximum Power Dissipation
Ta = 25^oC
Ta = 75^oC
P_D
Operating Junction Temperature
T_J
Operating Junction and Storage Temperature Range
T_J, T_STG
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
RÓ¨_JF
RÓ¨_JA
Limit
-30
±20
-3
-20
-1.7
1.25
0.8
+150
- 55 to +150
Limit
75
130
I_D (A)
-3
-2
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: A09