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TSM2306 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 30V N-Channel MOSFET
TSM2306
30V N-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
57 @ VGS =10V
30
94 @ VGS =4.5V
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM2306CX RF SOT-23 3Kpcs / 7” Reel
Block Diagram
N-Channel MOSFET
ID (A)
3.5
2.8
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)a,b
IS
Ta = 25oC
Maximum Power Dissipation
Ta = 75oC
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
RÓ¨JF
RÓ¨JA
Limit
30
±20
3.5
±20
1.7
1.25
0.8
+150
-55 to +150
Limit
75
130
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6
Version: A09