TSM2305 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel MOSFET

TSM2305
20V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
52 @ V_GS =-4.5V
-20
71 @ V_GS =-2.5V
108 @ V_GS =-1.8V
I_D (A)
-3.2
-2.7
-2.0
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Battery Management
● High Speed Switch
Ordering Information
Part No.
Package
Packing
TSM2305CX RFG SOT-23
3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Block Diagram
P-Channel MOSFET
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a,b
Maximum Power Dissipation
T_A=25^oC
T_A=75^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J
T_J, T_STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in² pad of 2oz Cu, t ≤ 10 sec.
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
-20
±8
-3.2
-10
-1
1.25
0.8
+150
-55 to +150
Limit
80
150
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
o_C/W
1/6
Version: B11