TSM2302_15 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V N-Channel MOSFET

TSM2302
20V N-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Parameter
Value
V_DS
20
V_GS = 4.5V
65
R_DS(on) (max)
V_GS = 2.5V
95
Q_g
5.4
Unit
V
mΩ
nC
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No.
Package
Packing
TSM2302CX RF
SOT-23 3kpcs / 7” Reel
TSM2302CX RFG SOT-23 3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (T_C = 25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current ^{(Note 1)}
I_DM
Continuous Source Current (Diode Conduction) ^{(Note 2)}
I_S
Maximum Power Dissipation
Ta = 25°C
Ta = 75°C
P_D
Operating Junction and Storage Temperature Range
T_J, T_STG
Thermal Performance
Parameter
Thermal Resistance Junction to Foot
Thermal Resistance Junction to Ambient
Symbol
R_Ó¨JF
R_Ó¨JA
Limit
20
±8
2.8
8
1.6
1.25
0.8
-55 to +150
Limit
75
145
Unit
V
V
A
A
A
W
°C
Unit
°C/W
°C/W
1/6
Version: C15