TSM2301_1 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel Enhancement Mode MOSFET

TSM2301
-20V P-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Source
3. Drain
V_DS = -20V
R_{DS (on)}, Vgs @ -4.5V, Ids @ -2.8A =130mΩ
R_{DS (on)}, Vgs @ -2.5V, Ids @ -2.0A =190mΩ
Features
 Advanced trench process technology
 High density cell design for ultra low on-resistance
 Excellent thermal and electrical capabilities
 Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
TSM2301CX
Packing
Tape & Reel
Package
SOT-23
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 ^oC
Ta = 75 ^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
TL
Rθja
Limit
-20V
±8
-2.3
-10
1.25
0.8
+150
- 55 to +150
Limit
5
100
Unit
V
V
A
A
W
o_C
o_C
Unit
S
o_C/W
TSM2301
1-6
2003/12 rev. C