TSM2301A_14 Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 20V P-Channel MOSFET

TSM2301A
20V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Parameter
Value
V_DS
-20
V_GS = -4.5V 130
R_DS(on) (max)
V_GS = -2.5V
190
Q_g
7.2
Unit
V
mΩ
nC
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Ordering Information
Part No.
Package
Packing
TSM2301ACX RFG
SOT-23
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (T_A=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction) ^{(Note 1,2)}
Maximum Power Dissipation
Operating Junction Temperature
T_A=25^oC
T_A=70^oC
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J
T_J, T_STG
Thermal Performance
Parameter
Junction to Ambient Thermal Resistance (PCB mounted)
Symbol
R_Ó¨JA
P-Channel MOSFET
Limit
-20
±12
-2.8
-10
-1
0.7
0.45
+150
-55 to +150
Limit
175
Unit
V
V
A
A
A
W
o_C
o_C
Unit
o_C/W
1/6
Version: B14