TSM210N06 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 60V N-Channel Power MOSFET

TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
TSM210N06
60V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
60
3.1 @ V_GS =10V
I_D (A)
210
Features
● Advanced Trench Technology
● Low R_DS(ON) 3.1mΩ (Max.)
● Low gate charge typical @ 160nC (Typ.)
● Low Crss typical @ 300pF (Typ.)
Ordering Information
Part No.
TSM210N06CZ C0
Package
TO-220
Packing
50pcs / Tube
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C=25°C
Continuous Drain Current
T_C=70°C
T_A=25°C
I_D
T_A=70°C
Drain Current-Pulsed Note 1
I_DM
Avalanche Current, L=0.3mH
I_AS, I_AR
Avalanche Energy, L=0.3mH
E_AS, E_AR
T_C=25°C
Maximum Power Dissipation
T_C=70°C
T_A=25°C
P_D
T_A=70°C
Storage Temperature Range
T_STG
Operating Junction Temperature Range
T_J
* Limited by maximum junction temperature
Limit
60
±20
210
170
19
15.2
650
113
1900
250
160
2
1.3
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RÓ¨_JC
RÓ¨_JA
Limit
0.5
62.5
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
o_C/W
o_C/W
1/4
Version: A12