TSM20N50 Datasheet, PDF (1/10 Pages) Taiwan Semiconductor Company, Ltd – 500V N-Channel Power MOSFET

TO-220
TSM20N50
500V N-Channel Power MOSFET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
500
0.3 @ V_GS =10V
I_D (A)
18
General Description
The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Features
Block Diagram
● Low R_DS(ON) 0.3Ω (Max.)
● Low gate charge typical @ 54nC (Typ.)
● Improve dv/dt capability
Ordering Information
Part No.
TSM20N50CZ C0
TSM20N50CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current(T_C=25℃)
I_D
Pulsed Drain Current *
I_DM
Peak Diode Recovery dv/dt (Note 3)
dv/dt
Single Pulse Avalanche Energy (Note 2)
E_AS
Avalanche Current (Repetitive) (Note 1)
I_AR
Repetitive Avalanche Energy (Note 1)
E_AR
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
T_J
T_STG
Limit
500
±30
18
72
4.5
954
18
29
150
-55 to +150
Unit
V
V
A
A
V/ns
mJ
A
mJ
ºC
o_C
1/10
Version: A12