TSM200N03D Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – Dual N-Channel MOSFET

TSM200N03D
Taiwan Semiconductor
FEATURES
● Fast switching
● 100% avalanche tested
● Pb-free plating
● RoHS compliant
● Halogen-free package
APPLICATION
● Power Supply
● Motor COntrol
Dual N-Channel MOSFET
30V, 20A, 20mΩ
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
V_DS
30
V
V_GS = -10V
20
R_DS(on) (max)
mΩ
V_GS = -4.5V
30
Q_g
4.1
nC
PDFN33 Dual
Notes: Moisture sensitivity level: level 3. Per J-STD-020
Dual N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ^{(Note 1)}
T_C = 25°C
I_D
20
T_C = 100°C
13
Pulsed Drain Current ^{(Note 2)}
I_DM
80
Total Power Dissipation @ T_C = 25°C
Single Pulsed Avalanche Energy ^{(Note 3)}
Single Pulsed Avalanche Current ^{(Note 3)}
Operating Junction and Storage Temperature Range
P_DTOT
E_AS
I_AS
T_J, T_STG
20
14
17
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
R_Ó¨JC
6.4
°C/W
Junction to Ambient Thermal Resistance
R_Ó¨JA
62
°C/W
Notes: RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RÓ¨JA shown below for single device operation on FR-4 PCB in still air
Document Number:DS_P0000166
1
Version: A15