TSM1NB60_15 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Power MOSFET

TSM1NB60
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 1A, 10Ω
FEATURES
● Advanced planar process
● 100% avalanche tested
● Low R_DS(ON) 8Ω (Typ.)
● Low gate charge typical @ 6.1 nC (Typ.)
● Low Crss typical @4.2pF (Typ.)
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
V_DS
R_DS(on) (max)
Q_g
600
V
10
Ω
6.1
nC
APPLICATION
● Power Supply
● Lighting
● Charger
SOT-223
TO-251 (IPAK)
TO-252 (DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL IPAK/DPAK
SOT-223
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^{(Note 1)}
Pulsed Drain Current ^{(Note 2)}
Total Power Dissipation @ T_C = 25°C
Single Pulsed Avalanche Energy ^{(Note 3)}
Single Pulsed Avalanche Current ^{(Note 3)}
Peak Diode Recovery dv/dt^{(Note 4)}
T_C = 25°C
T_C = 100°C
V_DS
V_GS
I_D
I_DM
P_DTOT
E_AS
I_AS
dv/dt
600
±30
1
0.7
4
39
2.1
5
1
4.5
Operating Junction and Storage Temperature Range
T_J, T_STG
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
V/ns
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL IPAK/DPAK SOT-223 UNIT
Junction to Case Thermal Resistance
R_Ó¨JC
2.87
--
°C/W
Junction to Ambient Thermal Resistance
R_Ó¨JA
110
60
°C/W
Notes: RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RÓ¨JA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000038
1
Version: B15