TSM1NB60S Datasheet, PDF (1/6 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel Power MOSFET

TO-92
Pin Definition:
1. Gate
2. Drain
3. Source
TSM1NB60S
600V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
600
10 @ V_GS =10V
I_D (A)
0.25
General Description
The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced
technology has been especially tailored to minimize on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and commutation mode.
Features
● Low R_DS(ON) 8Ω (Typ.)
● Low gate charge typical @ 6.1nC (Typ.)
● Low Crss typical @ 4.2pF (Typ.)
Block Diagram
Ordering Information
Part No.
Package
TSM1NB60SCT B0
TO-92
TSM1NB60SCT B0G TO-92
TSM1NB60SCT A3
TO-92
TSM1NB60SCT A3G TO-92
Note: “G” denotes for Halogen Free
Packing
1Kpcs / Bulk
1Kpcs / Bulk
2Kpcs / Ammo
2Kpcs / Ammo
Absolute Maximum Rating (T_A=25^oC unless otherwise noted)
N-Channel MOSFET
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25ºC
Tc=100ºC
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation @ T_C = 25^oC
Operating Junction Temperature
Storage Temperature Range
Note: Limited by maximum junction temperature
Thermal Performance
V_DS
V_GS
I_D
I_DM
E_AS
dv/dt
P_TOT
T_J
T_STG
600
±30
0.5
0.25
2
5
4.5
2.5
150
-55 to +150
V
V
A
A
A
mJ
V/ns
W
ºC
o_C
Parameter
Thermal Resistance - Junction to Lead
Thermal Resistance - Junction to Ambient
Symbol
RÓ¨_JL
RÓ¨_JA
Limit
50
110
Unit
o_C/W
o_C/W
1/6
Version: A12