TSM1NB60 Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel Power MOSFET

TO-251
(IPAK)
TSM1NB60
600V N-Channel Power MOSFET
TO-252
(DPAK)
SOT-223
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
600
10 @ V_GS =10V
I_D (A)
0.5
General Description
The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced
technology has been especially tailored to minimize on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and commutation mode.
Features
● Low R_DS(ON) 8Ω (Typ.)
● Low gate charge typical @ 6.1nC (Typ.)
● Low Crss typical @ 4.2pF (Typ.)
Block Diagram
Ordering Information
Part No.
Package
TSM1NB60CH C5G TO-251
TSM1NB60CP ROG TO-252
TSM1NB60CW RPG SOT-223
Note: “G” denotes for Halogen Free
Packing
75pcs / Tube
2.5Kpcs / 13” Reel
2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc = 25ºC
Tc = 100ºC
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation @ T_C = 25^oC
Operating Junction Temperature
Storage Temperature Range
Note: Limited by maximum junction temperature
V_DS
V_GS
I_D
I_DM
E_AS
dv/dt
P_TOT
T_J
T_STG
IPAK
39
Limit
DPAK
600
±30
1
0.7
4
5
4.5
39
150
-55 to +150
SOT-223
2.1
Unit
V
V
A
A
A
mJ
V/ns
W
ºC
o_C
1/8
Version: A12