TSM1N80_15 Datasheet, PDF (1/7 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Power MOSFET

TSM1N80
Taiwan Semiconductor
N-Channel Power MOSFET
800V, 0.3A, 21.6Ω
FEATURES
● Advanced planar process
● 100% avalanche tested
● Fast switching
APPLICATION
● Power Supply
● Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
V_DS
800
V
R_DS(on) (max)
21.6
Ω
Q_g
5
nC
SOT-223
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Single Pulse Avalanche Energy ^{(Note 2)}
Avalanche Current, Repetitive or Not-Repetitive ^{(Note 1)}
Total Power Dissipation @ T_C = 25°C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
P_DTOT
T_J
T_J, T_STG
800
±30
0.3
1
90
1
2.1
150
- 55 to +150
UNIT
V
V
A
A
mJ
A
W
°C
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Ambient Thermal Resistance
R_Ó¨JA
60
°C/W
Notes: RÓ¨JA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RÓ¨JA shown below for single device operation on FR-4 PCB in still air
Document Number: DS_P0000037
1
Version: B15