TSM1N80 Datasheet, PDF (1/9 Pages) Taiwan Semiconductor Company, Ltd – 800V N-Channel MOSFET

TO-92
TSM1N80
800V N-Channel MOSFET
SOT-223
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
800
21.6 @ V_GS =10V
I_D (A)
0.15
General Description
The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a
fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage
transients.
Features
Block Diagram
● R_DS(ON)=18Ω(Typ.) @ V_GS=10V, I_D=0.15A
● Low gate charge @ 5nC (Typ.)
● Low Crss @ 2.7pF (Typ.)
● Fast switching
Ordering Information
Part No.
TSM1N80SCT B0
TSM1N80SCT A3
TSM1N80CW RP
Package
TO-92
TO-92
SOT-223
Packing
1Kpcs / Bulk
2Kpcs / Ammo
2.5kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current, Repetitive or Not-Repetitive (Note 1)
Total Power Dissipation @T_C = 25^oC
TO-92
SOT-223
Operating Junction and Storage Temperature Range
Lead Temperature (1/8” from case)
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
P_DTOT
T_J, T_STG
T_L
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
TO-92
SOT-223
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RÓ¨_JA
Limit
800
±30
0.3
1
90
1
3
2.1
-55 to +150
10
Limit
130
60
Unit
V
V
A
A
mJ
A
W
o_C
S
Unit
o_C/W
1/9
Version: A10