TSM1N60S_09 Datasheet, PDF (1/8 Pages) Taiwan Semiconductor Company, Ltd – 600V N-Channel Power MOSFET

TO-92
Pin Definition:
1. Gate
2. Drain
3. Source
TSM1N60S
600V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
600
11 @ V_GS =10V
I_D (A)
0.3
General Description
The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
● I_DSS and V_DS(on) specified at elevated temperature
Block Diagram
Ordering Information
Part No.
TSM1N60SCT B0
TSM1N60SCT A3
Package
TO-92
TO-92
Packing
1Kpcs / Bulk
2Kpcs / Ammo
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a,b
Single Pulse Drain to Source Avalanche Energy
(V_DD = 100V, V_GS=10V, I_AS=2A, L=10mH, R_G=25Ω)
Total Power Dissipation @T_C = 25^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Lead Temperature (1/8” from case)
V_DS
V_GS
I_D
I_DM
I_S
EAS
P_DTOT
T_J
T_J, T_STG
T_L
Limit
600
±30
0.3
1.2
1
50
3
+150
-55 to +150
10
Unit
V
V
A
A
A
mJ
W
o_C
o_C
S
1/8
Version: C07