TSM1N60S Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – N-Channel Power Enhancement Mode MOSFET

TSM1N60S
N-Channel Power Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Drain
3. Source
V_DS = 600V
I_D = 0.3A
R_{DS (on)}, Vgs @ 10V, Ids @ 0.3A = 11Ω
General Description
The TSM1N60s is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche
and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies and converters, these devices are
particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
Features
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
I_DSS and V_DS(on) specified at elevated temperature
Block Diagram
Ordering Information
Part No.
TSM1N60SCT B0
TSM1N60SCT A3
Packing
Bulk Pack
Ammo Pack
Package
TO-92
TO-92
Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 ^oC
Ta > 25 ^oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Single Pulse Drain to Source Avalanche Energy
(V_DD = 50V, V_GS=10V, I_AS=0.3A, L=115mH)
Thermal Performance
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J
T_J, T_STG
E_AS
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Symbol
T_L
Rθja
TSM1N60S
1-4
Limit
600V
± 30
0.3
1.2
3
0.025
+150
- 55 to +150
50
Unit
V
V
A
A
W
W/^oC
o_C
o_C
mJ
Limit
10
50
Unit
S
o_C/W
2006/01 rev. A